VBsemi Elec-Single FETs, MOSFETs-VBZFB40N10

Description

Drain to Source Voltage;100V/Gate Charge(Qg);34nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);36mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4nF/Output Capacitance(Coss);500pF


N-Channel 100V 35A 96W Through Hole TO-251

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);34nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);36mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);34nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);36mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);180pF/Current - Continuous Drain(Id);35A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;4nF/Output Capacitance(Coss);500pF


    N-Channel 100V 35A 96W Through Hole TO-251

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