VBsemi Elec-Single FETs, MOSFETs-VBZFB50N03

Description

Drain to Source Voltage;30V/Gate Charge(Qg);33nC@15V/Number;1 N-channel/Pd - Power Dissipation;18W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.7nF


30V 1 N-channel 18W TO-251 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);33nC@15V/Number;1 N-channel/Pd - Power Dissipation;18W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

$1.38 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);33nC@15V/Number;1 N-channel/Pd - Power Dissipation;18W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);50A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;1.7nF


    30V 1 N-channel 18W TO-251 Single FETs, MOSFETs RoHS

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