VBsemi Elec-Single FETs, MOSFETs-VBZMB2N65

Description

Drain to Source Voltage;650V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;25W/RDS(on);4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1nF/Output Capacitance(Coss);45pF


N-Channel 650V 2A 25W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;25W/RDS(on);4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);11nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;25W/RDS(on);4Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1nF/Output Capacitance(Coss);45pF


    N-Channel 650V 2A 25W Through Hole TO-220F

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