VBsemi Elec-Single FETs, MOSFETs-WPM2016-VB

Description

Drain to Source Voltage;20V/Gate Charge(Qg);8.8nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);22mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;865pF/Output Capacitance(Coss);105pF


N-Channel 20V 6A 1.25W Surface Mount SOT-23(TO-236)

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);8.8nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);22mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$1.74 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);8.8nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);22mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;865pF/Output Capacitance(Coss);105pF


    N-Channel 20V 6A 1.25W Surface Mount SOT-23(TO-236)

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