VBsemi Elec-Single FETs, MOSFETs-WPM3004-8/TR-VB

Description

Drain to Source Voltage;30V/Gate Charge(Qg);24nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);56mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));2V


30V 56mΩ@4.5V 1 P-Channel 2.5W SOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);24nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);56mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));2V30V 56mΩ@4.5V 1 P-Channel... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);24nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);56mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));2V


    30V 56mΩ@4.5V 1 P-Channel 2.5W SOP-8 Single FETs, MOSFETs RoHS

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