VISHAY-IGBT Modules-VS-GT80DA120U

Description

/Collector-Emitter Breakdown Voltage (Vces);1.2kV/Current - Collector(Ic);139A/Pd - Power Dissipation;658W/Gate-Emitter Threshold Voltage (Vge(th)@Ic);2.55V@15V,80A/Input Capacitance(Cies);4.4nF@25V/Operating Temperature;-40℃~+150℃@(Tj)


658W 139A 1.2kV SOT-227 IGBT Modules RoHS

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/Collector-Emitter Breakdown Voltage (Vces);1.2kV/Current - Collector(Ic);139A/Pd - Power Dissipation;658W/Gate-Emitter Threshold Voltage (Vge(th)@Ic);2.55V@15V,80A/Input Capacitance(Cies);4.4nF@25V/Operating Temperature;-40℃~+150℃@(Tj)658W 139A 1.2kV SOT-227 IGBT Modules RoHS Read more

$99.42 Excl. VAT

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    Description

    /Collector-Emitter Breakdown Voltage (Vces);1.2kV/Current - Collector(Ic);139A/Pd - Power Dissipation;658W/Gate-Emitter Threshold Voltage (Vge(th)@Ic);2.55V@15V,80A/Input Capacitance(Cies);4.4nF@25V/Operating Temperature;-40℃~+150℃@(Tj)


    658W 139A 1.2kV SOT-227 IGBT Modules RoHS

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