/Collector-Emitter Breakdown Voltage (Vces);1.2kV/Current - Collector(Ic);169A/Pd - Power Dissipation;781W/Gate-Emitter Threshold Voltage (Vge(th)@Ic);2.6V@15V,75A/Operating Temperature;-40℃~+150℃@(Tj)781W 169A 1.2kV SOT-227 IGBT Modules RoHS Read more

$107.61 Excl. VAT

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