VISHAY-Single FETs, MOSFETs-IRLR014TRPBF

Description

Drain to Source Voltage;60V/Gate Charge(Qg);8.4nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;25W/RDS(on);200mΩ@5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.7A/Gate Threshold Voltage (Vgs(th));2V


60V 200mΩ@5V 1 N-channel 25W TO-252-2(DPAK) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);8.4nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;25W/RDS(on);200mΩ@5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.7A/Gate Threshold Voltage (Vgs(th));2V60V 200mΩ@5V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);8.4nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;25W/RDS(on);200mΩ@5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.7A/Gate Threshold Voltage (Vgs(th));2V


    60V 200mΩ@5V 1 N-channel 25W TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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