VISHAY-Single FETs, MOSFETs-SI1012X-T1-GE3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);750pC@10V,4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250mW/RDS(on);1.25Ω@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));900mV


N-Channel 20V 600mA 250mW Surface Mount SC-89

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);750pC@10V,4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250mW/RDS(on);1.25Ω@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));900mVN-Channel 20V 600mA 250mW... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);750pC@10V,4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;250mW/RDS(on);1.25Ω@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));900mV


    N-Channel 20V 600mA 250mW Surface Mount SC-89

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