VISHAY-Single FETs, MOSFETs-SI1013X-T1-GE3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.5nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;275mW/RDS(on);2.7Ω@1.8V/Current - Continuous Drain(Id);400mA


20V 2.7Ω@1.8V 1 P-Channel 275mW SC-89 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);1.5nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;275mW/RDS(on);2.7Ω@1.8V/Current - Continuous Drain(Id);400mA20V 2.7Ω@1.8V 1 P-Channel 275mW SC-89 Single FETs, MOSFETs... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.5nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;275mW/RDS(on);2.7Ω@1.8V/Current - Continuous Drain(Id);400mA


    20V 2.7Ω@1.8V 1 P-Channel 275mW SC-89 Single FETs, MOSFETs RoHS

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