VISHAY-Single FETs, MOSFETs-SI1079X-T1-GE3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Number;1 P-Channel/Pd - Power Dissipation;210mW/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);1.44A/Gate Threshold Voltage (Vgs(th));600mV/Ciss-Input Capacitance;750pF


30V 100mΩ@4.5V 1 P-Channel 210mW SC-89-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Number;1 P-Channel/Pd - Power Dissipation;210mW/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);1.44A/Gate Threshold Voltage (Vgs(th));600mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);26nC@10V/Number;1 P-Channel/Pd - Power Dissipation;210mW/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);60pF/Current - Continuous Drain(Id);1.44A/Gate Threshold Voltage (Vgs(th));600mV/Ciss-Input Capacitance;750pF


    30V 100mΩ@4.5V 1 P-Channel 210mW SC-89-6 Single FETs, MOSFETs RoHS

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