VISHAY-Single FETs, MOSFETs-SI1900DL-T1-GE3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);1.4nC@10V/Number;2 N-Channel/Pd - Power Dissipation;300mW;270mW/RDS(on);480mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);630mA;590mA/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;50pF


30V 480mΩ@10V 2 N-Channel SOT-363-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);1.4nC@10V/Number;2 N-Channel/Pd - Power Dissipation;300mW;270mW/RDS(on);480mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);630mA;590mA/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

$0.69 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);1.4nC@10V/Number;2 N-Channel/Pd - Power Dissipation;300mW;270mW/RDS(on);480mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);630mA;590mA/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;50pF


    30V 480mΩ@10V 2 N-Channel SOT-363-6 Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account