VISHAY-Single FETs, MOSFETs-SI1900DL-T1-GE3
- VISHAY
Drain to Source Voltage;30V/Gate Charge(Qg);1.4nC@10V/Number;2 N-Channel/Pd - Power Dissipation;300mW;270mW/RDS(on);480mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);630mA;590mA/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more
$0.69 Excl. VAT
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