VISHAY-Single FETs, MOSFETs-SI2301BDS-T1-GE3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);10nC@6V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;900mW/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);2.4A/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;375pF/Output Capacitance(Coss);95pF


P-Channel 20V 2.4A 0.9W Surface Mount SOT-23-3

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);10nC@6V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;900mW/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);2.4A/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);10nC@6V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;900mW/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);2.4A/Gate Threshold Voltage (Vgs(th));950mV/Ciss-Input Capacitance;375pF/Output Capacitance(Coss);95pF


    P-Channel 20V 2.4A 0.9W Surface Mount SOT-23-3

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