VISHAY-Single FETs, MOSFETs-SI2307BDS-T1-GE3
- VISHAY
Drain to Source Voltage;30V/Gate Charge(Qg);15nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.25W/RDS(on);130mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more
$45.00 Excl. VAT
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