VISHAY-Single FETs, MOSFETs-SI2307BDS-T1-GE3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);15nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.25W/RDS(on);130mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;380pF/Output Capacitance(Coss);100pF


30V 130mΩ@4.5V 1 P-Channel 1.25W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);15nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.25W/RDS(on);130mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);15nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.25W/RDS(on);130mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;380pF/Output Capacitance(Coss);100pF


    30V 130mΩ@4.5V 1 P-Channel 1.25W SOT-23 Single FETs, MOSFETs RoHS

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