VISHAY-Single FETs, MOSFETs-Si2308BDS-T1-GE3

Description

Drain to Source Voltage;60V/Gate Charge(Qg);6.8nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.8W/RDS(on);192mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;190pF/Output Capacitance(Coss);26pF


N-Channel 60V 2.3A 1.8W Surface Mount SOT-23-3

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);6.8nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.8W/RDS(on);192mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);6.8nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.8W/RDS(on);192mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;190pF/Output Capacitance(Coss);26pF


    N-Channel 60V 2.3A 1.8W Surface Mount SOT-23-3

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