VISHAY-Single FETs, MOSFETs-SI2314EDS-T1-E3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);14nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;800mW/RDS(on);51mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.9A/Gate Threshold Voltage (Vgs(th));950mV


20V 51mΩ@1.8V 1 N-channel 800mW SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);14nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;800mW/RDS(on);51mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.9A/Gate Threshold Voltage (Vgs(th));950mV20V 51mΩ@1.8V 1 N-channel... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);14nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;800mW/RDS(on);51mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.9A/Gate Threshold Voltage (Vgs(th));950mV


    20V 51mΩ@1.8V 1 N-channel 800mW SOT-23 Single FETs, MOSFETs RoHS

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