VISHAY-Single FETs, MOSFETs-SI2316BDS-T1-GE3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);3.16nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;800mW/RDS(on);80mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;350pF/Output Capacitance(Coss);65pF


30V 80mΩ@4.5V 1 N-channel 800mW SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);3.16nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;800mW/RDS(on);80mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);3.16nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;800mW/RDS(on);80mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);37pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;350pF/Output Capacitance(Coss);65pF


    30V 80mΩ@4.5V 1 N-channel 800mW SOT-23 Single FETs, MOSFETs RoHS

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