VISHAY-Single FETs, MOSFETs-SI2328DS-T1-E3

Description

Drain to Source Voltage;100V/Gate Charge(Qg);4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);250mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));4V


100V 250mΩ@10V 1 N-channel 1.25W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);250mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));4V100V 250mΩ@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.25W/RDS(on);250mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));4V


    100V 250mΩ@10V 1 N-channel 1.25W SOT-23 Single FETs, MOSFETs RoHS

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