VISHAY-Single FETs, MOSFETs-SI2367DS-T1-GE3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);23nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;960mW;1.7W/RDS(on);66mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);89pF/Current - Continuous Drain(Id);3.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;561pF/Output Capacitance(Coss);112pF


P-Channel 20V 3.8A 960mW 1.7W Surface Mount SOT-23-3

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);23nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;960mW;1.7W/RDS(on);66mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);89pF/Current - Continuous Drain(Id);3.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);23nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;960mW;1.7W/RDS(on);66mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);89pF/Current - Continuous Drain(Id);3.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;561pF/Output Capacitance(Coss);112pF


    P-Channel 20V 3.8A 960mW 1.7W Surface Mount SOT-23-3

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