VISHAY-Single FETs, MOSFETs-SI2367DS-T1-GE3
- VISHAY
Drain to Source Voltage;20V/Gate Charge(Qg);23nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;960mW;1.7W/RDS(on);66mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);89pF/Current - Continuous Drain(Id);3.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more
$2.22 Excl. VAT
-
Guaranteed secure & safe checkout.