VISHAY-Single FETs, MOSFETs-SI2369DS-T1-GE3
- VISHAY
Drain to Source Voltage;30V/Gate Charge(Qg);11.4nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);40mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);7.6A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more
$1.35 Excl. VAT
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