VISHAY-Single FETs, MOSFETs-SI3410DV-T1-GE3

Description

Drain to Source Voltage;30V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;4.1W/RDS(on);23mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);72pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.295nF/Output Capacitance(Coss);170pF


30V 23mΩ@4.5V 1 N-channel 4.1W TSOP-6-1.5mm Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;4.1W/RDS(on);23mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);72pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.295nF/Output Capacitance(Coss);170pF30V 23mΩ@4.5V... Read more

$3.81 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;4.1W/RDS(on);23mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);72pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.295nF/Output Capacitance(Coss);170pF


    30V 23mΩ@4.5V 1 N-channel 4.1W TSOP-6-1.5mm Single FETs, MOSFETs RoHS

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