VISHAY-Single FETs, MOSFETs-SI3429EDV-T1-GE3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);43.2nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);365pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;4.083nF/Output Capacitance(Coss);395pF


P-Channel 20V 8A 2W Surface Mount TSOP-6

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);43.2nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);365pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);43.2nC@8V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);365pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;4.083nF/Output Capacitance(Coss);395pF


    P-Channel 20V 8A 2W Surface Mount TSOP-6

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