VISHAY-Single FETs, MOSFETs-SI3453DV-T1-GE3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);2.4nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.6W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);3.4A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;155pF


30V 165mΩ@10V 1 P-Channel 1.6W TSOP-6-1.5mm Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);2.4nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.6W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);3.4A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);2.4nC@10V/Number;1 P-Channel/Pd - Power Dissipation;1.6W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);3.4A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;155pF


    30V 165mΩ@10V 1 P-Channel 1.6W TSOP-6-1.5mm Single FETs, MOSFETs RoHS

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