VISHAY-Single FETs, MOSFETs-SI3460DDV-T1-GE3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);6.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.7W/RDS(on);28mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6.2A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;666pF


20V 28mΩ@4.5V 1 N-channel 1.7W TSOP-6-1.5mm Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);6.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.7W/RDS(on);28mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6.2A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;666pF20V 28mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);6.7nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.7W/RDS(on);28mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);6.2A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;666pF


    20V 28mΩ@4.5V 1 N-channel 1.7W TSOP-6-1.5mm Single FETs, MOSFETs RoHS

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