VISHAY-Single FETs, MOSFETs-SI4128DY-T1-E3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.4W;5W/RDS(on);24mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10.9A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;435pF


30V 24mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.4W;5W/RDS(on);24mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10.9A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;435pF30V 24mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.4W;5W/RDS(on);24mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10.9A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;435pF


    30V 24mΩ@10V 1 N-channel SOP-8 Single FETs, MOSFETs RoHS

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