VISHAY-Single FETs, MOSFETs-SI4408DY-T1-E3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);32nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.5W/RDS(on);6.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));1V


20V 6.8mΩ@4.5V 1 N-channel 3.5W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);32nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.5W/RDS(on);6.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));1V20V 6.8mΩ@4.5V 1 N-channel... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);32nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;3.5W/RDS(on);6.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));1V


    20V 6.8mΩ@4.5V 1 N-channel 3.5W SOIC-8 Single FETs, MOSFETs RoHS

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