VISHAY-Single FETs, MOSFETs-SI4425BDY-T1-E3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);100nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2.5W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11.4A/Gate Threshold Voltage (Vgs(th));3V


P-Channel 30V 11.4A 2.5W Surface Mount SO-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);100nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2.5W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11.4A/Gate Threshold Voltage (Vgs(th));3VP-Channel 30V 11.4A 2.5W... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);100nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2.5W/RDS(on);12mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11.4A/Gate Threshold Voltage (Vgs(th));3V


    P-Channel 30V 11.4A 2.5W Surface Mount SO-8

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