VISHAY-Single FETs, MOSFETs-SI4427BDY-T1-E3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);70nC@4.5V/Number;1 P-Channel/Type;P-Channel/RDS(on);19.5mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);12.6A/Gate Threshold Voltage (Vgs(th));1.4V


30V 19.5mΩ@2.5V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);70nC@4.5V/Number;1 P-Channel/Type;P-Channel/RDS(on);19.5mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);12.6A/Gate Threshold Voltage (Vgs(th));1.4V30V 19.5mΩ@2.5V 1 P-Channel SOIC-8 Single FETs,... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);70nC@4.5V/Number;1 P-Channel/Type;P-Channel/RDS(on);19.5mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);12.6A/Gate Threshold Voltage (Vgs(th));1.4V


    30V 19.5mΩ@2.5V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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