VISHAY-Single FETs, MOSFETs-SI4447DY-T1-E3

Description

Drain to Source Voltage;40V/Gate Charge(Qg);9nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);72mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;805pF/Output Capacitance(Coss);120pF


40V 72mΩ@4.5V 1 P-Channel 1.3W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);9nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);72mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);9nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);72mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;805pF/Output Capacitance(Coss);120pF


    40V 72mΩ@4.5V 1 P-Channel 1.3W SOIC-8 Single FETs, MOSFETs RoHS

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