VISHAY-Single FETs, MOSFETs-SI4463BDY-T1-E3

Description

Drain to Source Voltage;20V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;3W/RDS(on);20mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13.7A/Gate Threshold Voltage (Vgs(th));1.4V


20V 20mΩ@2.5V 1 P-Channel 3W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;3W/RDS(on);20mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13.7A/Gate Threshold Voltage (Vgs(th));1.4V20V 20mΩ@2.5V 1 P-Channel 3W... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;3W/RDS(on);20mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);13.7A/Gate Threshold Voltage (Vgs(th));1.4V


    20V 20mΩ@2.5V 1 P-Channel 3W SOIC-8 Single FETs, MOSFETs RoHS

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