VISHAY-Single FETs, MOSFETs-SI4490DY-T1-E3

Description

Drain to Source Voltage;200V/Gate Charge(Qg);42nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W/RDS(on);80mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2V


200V 80mΩ@10V 1 N-channel 3.1W SOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);42nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W/RDS(on);80mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2V200V 80mΩ@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);42nC@10V/Number;1 N-channel/Pd - Power Dissipation;3.1W/RDS(on);80mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2V


    200V 80mΩ@10V 1 N-channel 3.1W SOP-8 Single FETs, MOSFETs RoHS

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