VISHAY-Single FETs, MOSFETs-SI5458DU-T1-GE3

Description

Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;3.5W;10.4W/RDS(on);41mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;325pF


30V 41mΩ@10V 1 N-channel ChipFET-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;3.5W;10.4W/RDS(on);41mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;325pF30V... Read more

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    Description

    Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;3.5W;10.4W/RDS(on);41mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;325pF


    30V 41mΩ@10V 1 N-channel ChipFET-8 Single FETs, MOSFETs RoHS

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