VISHAY-Single FETs, MOSFETs-SI5902BDC-T1-GE3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);7nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;3.12W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V


30V 100mΩ@4.5V 2 N-Channel 3.12W ChipFET1206-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);7nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;3.12W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V30V 100mΩ@4.5V 2 N-Channel... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);7nC@10V/Number;2 N-Channel/Type;N-Channel/Pd - Power Dissipation;3.12W/RDS(on);100mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V


    30V 100mΩ@4.5V 2 N-Channel 3.12W ChipFET1206-8 Single FETs, MOSFETs RoHS

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