VISHAY-Single FETs, MOSFETs-SI6423DQ-T1-E3

Description

Drain to Source Voltage;12V/Gate Charge(Qg);110nC@5V/Number;1 P-Channel/Pd - Power Dissipation;1.5W/RDS(on);8.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9.5A/Gate Threshold Voltage (Vgs(th));400mV


12V 8.5mΩ@4.5V 1 P-Channel 1.5W TSSOP-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);110nC@5V/Number;1 P-Channel/Pd - Power Dissipation;1.5W/RDS(on);8.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9.5A/Gate Threshold Voltage (Vgs(th));400mV12V 8.5mΩ@4.5V 1 P-Channel... Read more

$3.66 Excl. VAT

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);110nC@5V/Number;1 P-Channel/Pd - Power Dissipation;1.5W/RDS(on);8.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);9.5A/Gate Threshold Voltage (Vgs(th));400mV


    12V 8.5mΩ@4.5V 1 P-Channel 1.5W TSSOP-8 Single FETs, MOSFETs RoHS

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