VISHAY-Single FETs, MOSFETs-SI7172DP-T1-GE3

Description

Drain to Source Voltage;200V/Gate Charge(Qg);77nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);76mΩ@6V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.25nF


200V 76mΩ@6V 1 N-channel 96W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);77nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);76mΩ@6V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.25nF200V 76mΩ@6V 1 N-channel 96W PowerPAK-SO-8... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);77nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;96W/RDS(on);76mΩ@6V/Operating Temperature -;-55℃~+150℃/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.25nF


    200V 76mΩ@6V 1 N-channel 96W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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