VISHAY-Single FETs, MOSFETs-SI7370DP-T1-GE3

Description

Drain to Source Voltage;60V/Gate Charge(Qg);46nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.9W/RDS(on);13mΩ@6V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);15.8A/Gate Threshold Voltage (Vgs(th));4V


60V 13mΩ@6V 1 N-channel 1.9W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);46nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.9W/RDS(on);13mΩ@6V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);15.8A/Gate Threshold Voltage (Vgs(th));4V60V 13mΩ@6V 1 N-channel... Read more

$3.90 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);46nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.9W/RDS(on);13mΩ@6V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);15.8A/Gate Threshold Voltage (Vgs(th));4V


    60V 13mΩ@6V 1 N-channel 1.9W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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