VISHAY-Single FETs, MOSFETs-SI7386DP-T1-E3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);11.5nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.8W/RDS(on);9.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));2.5V


N-Channel 30V 19A 1.8W Surface Mount PowerPAKSO-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);11.5nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.8W/RDS(on);9.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));2.5VN-Channel 30V 19A 1.8W... Read more

$6.12 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);11.5nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.8W/RDS(on);9.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);19A/Gate Threshold Voltage (Vgs(th));2.5V


    N-Channel 30V 19A 1.8W Surface Mount PowerPAKSO-8

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