VISHAY-Single FETs, MOSFETs-SI7431DP-T1-GE3

Description

Drain to Source Voltage;200V/Gate Charge(Qg);88nC@10V/Number;1 P-Channel/Pd - Power Dissipation;5.4W/RDS(on);174mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);3.8A/Ciss-Input Capacitance;135pF


200V 174mΩ@10V 1 P-Channel 5.4W PDFN-8(5.9x5.2) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);88nC@10V/Number;1 P-Channel/Pd - Power Dissipation;5.4W/RDS(on);174mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);3.8A/Ciss-Input Capacitance;135pF200V 174mΩ@10V 1... Read more

$51.78 Excl. VAT

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);88nC@10V/Number;1 P-Channel/Pd - Power Dissipation;5.4W/RDS(on);174mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);3.8A/Ciss-Input Capacitance;135pF


    200V 174mΩ@10V 1 P-Channel 5.4W PDFN-8(5.9x5.2) Single FETs, MOSFETs RoHS

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