VISHAY-Single FETs, MOSFETs-SI7434DP-T1-E3

Description

Drain to Source Voltage;250V/Gate Charge(Qg);50nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;5.2W/RDS(on);162mΩ@6V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.8A/Gate Threshold Voltage (Vgs(th));4V


250V 162mΩ@6V 1 N-channel 5.2W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;250V/Gate Charge(Qg);50nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;5.2W/RDS(on);162mΩ@6V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.8A/Gate Threshold Voltage (Vgs(th));4V250V 162mΩ@6V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;250V/Gate Charge(Qg);50nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;5.2W/RDS(on);162mΩ@6V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.8A/Gate Threshold Voltage (Vgs(th));4V


    250V 162mΩ@6V 1 N-channel 5.2W PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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