VISHAY-Single FETs, MOSFETs-SI8416DB-T2-E1

Description

Drain to Source Voltage;8V/Gate Charge(Qg);17nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;2.77W/RDS(on);23mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);450pF/Current - Continuous Drain(Id);9.3A/Gate Threshold Voltage (Vgs(th));350mV/Ciss-Input Capacitance;1.47nF


8V 23mΩ@4.5V 1 N-channel 2.77W MicroFoot-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;8V/Gate Charge(Qg);17nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;2.77W/RDS(on);23mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);450pF/Current - Continuous Drain(Id);9.3A/Gate Threshold Voltage (Vgs(th));350mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;8V/Gate Charge(Qg);17nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;2.77W/RDS(on);23mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);450pF/Current - Continuous Drain(Id);9.3A/Gate Threshold Voltage (Vgs(th));350mV/Ciss-Input Capacitance;1.47nF


    8V 23mΩ@4.5V 1 N-channel 2.77W MicroFoot-6 Single FETs, MOSFETs RoHS

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