VISHAY-Single FETs, MOSFETs-SI8457DB-T1-E1

Description

Drain to Source Voltage;12V/Gate Charge(Qg);37nC@8V/Number;1 P-Channel/Pd - Power Dissipation;1.1W/RDS(on);19mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);620pF/Current - Continuous Drain(Id);10.2A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;2.9nF


12V 19mΩ@4.5V 1 P-Channel 1.1W MicroFoot-4(1.6x1.6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);37nC@8V/Number;1 P-Channel/Pd - Power Dissipation;1.1W/RDS(on);19mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);620pF/Current - Continuous Drain(Id);10.2A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);37nC@8V/Number;1 P-Channel/Pd - Power Dissipation;1.1W/RDS(on);19mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);620pF/Current - Continuous Drain(Id);10.2A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;2.9nF


    12V 19mΩ@4.5V 1 P-Channel 1.1W MicroFoot-4(1.6x1.6) Single FETs, MOSFETs RoHS

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