VISHAY-Single FETs, MOSFETs-SI8457DB-T1-E1
- VISHAY
Drain to Source Voltage;12V/Gate Charge(Qg);37nC@8V/Number;1 P-Channel/Pd - Power Dissipation;1.1W/RDS(on);19mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);620pF/Current - Continuous Drain(Id);10.2A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input... Read more
$0.54 Excl. VAT
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