VISHAY-Single FETs, MOSFETs-SI8466EDB-T2-E1
- VISHAY
Drain to Source Voltage;8V/Gate Charge(Qg);13nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;780mW;1.8W/RDS(on);43mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);192pF/Current - Continuous Drain(Id);5.4A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input... Read more
$0.57 Excl. VAT
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