VISHAY-Single FETs, MOSFETs-SI8497DB-T2-E1

Description

Drain to Source Voltage;30V/Gate Charge(Qg);49nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2.77W;13W/RDS(on);53mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);102pF/Current - Continuous Drain(Id);5.9A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;1.32nF


30V 53mΩ@4.5V 1 P-Channel UFBGA-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);49nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2.77W;13W/RDS(on);53mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);102pF/Current - Continuous Drain(Id);5.9A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);49nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2.77W;13W/RDS(on);53mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);102pF/Current - Continuous Drain(Id);5.9A/Gate Threshold Voltage (Vgs(th));500mV/Ciss-Input Capacitance;1.32nF


    30V 53mΩ@4.5V 1 P-Channel UFBGA-6 Single FETs, MOSFETs RoHS

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