VISHAY-Single FETs, MOSFETs-SI8806DB-T2-E1

Description

Drain to Source Voltage;12V/Gate Charge(Qg);17nC@8V/Number;1 N-channel/Pd - Power Dissipation;500mW/RDS(on);43mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.9A/Gate Threshold Voltage (Vgs(th));400mV


12V 43mΩ@4.5V 1 N-channel 500mW XFBGA-4 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);17nC@8V/Number;1 N-channel/Pd - Power Dissipation;500mW/RDS(on);43mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.9A/Gate Threshold Voltage (Vgs(th));400mV12V 43mΩ@4.5V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);17nC@8V/Number;1 N-channel/Pd - Power Dissipation;500mW/RDS(on);43mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.9A/Gate Threshold Voltage (Vgs(th));400mV


    12V 43mΩ@4.5V 1 N-channel 500mW XFBGA-4 Single FETs, MOSFETs RoHS

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