VISHAY-Single FETs, MOSFETs-SI8810EDB-T2-E1

Description

Drain to Source Voltage;20V/Gate Charge(Qg);8nC@8V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;900mW/RDS(on);125mΩ@1.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));900mV


20V 125mΩ@1.5V 1 N-channel 900mW BGA-4 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);8nC@8V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;900mW/RDS(on);125mΩ@1.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));900mV20V 125mΩ@1.5V 1 N-channel... Read more

$1.11 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);8nC@8V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;900mW/RDS(on);125mΩ@1.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));900mV


    20V 125mΩ@1.5V 1 N-channel 900mW BGA-4 Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account