VISHAY-Single FETs, MOSFETs-SI8812DB-T2-E1

Description

Drain to Source Voltage;20V/Number;1 N-channel/Pd - Power Dissipation;500mW/RDS(on);59mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));400mV


20V 59mΩ@4.5V 1 N-channel 500mW UFBGA-4 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Number;1 N-channel/Pd - Power Dissipation;500mW/RDS(on);59mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));400mV20V 59mΩ@4.5V 1 N-channel 500mW... Read more

$0.48 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Number;1 N-channel/Pd - Power Dissipation;500mW/RDS(on);59mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.2A/Gate Threshold Voltage (Vgs(th));400mV


    20V 59mΩ@4.5V 1 N-channel 500mW UFBGA-4 Single FETs, MOSFETs RoHS

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