VISHAY-Single FETs, MOSFETs-SI8816EDB-T2-E1

Description

Drain to Source Voltage;30V/Gate Charge(Qg);8nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;900mW/RDS(on);142mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;195pF/Output Capacitance(Coss);35pF


N-Channel 30V 2.3A 0.9W Surface Mount BGA-4

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);8nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;900mW/RDS(on);142mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);8nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;900mW/RDS(on);142mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;195pF/Output Capacitance(Coss);35pF


    N-Channel 30V 2.3A 0.9W Surface Mount BGA-4

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