VISHAY-Single FETs, MOSFETs-SI8819EDB-T2-E1

Description

Drain to Source Voltage;12V/Gate Charge(Qg);17nC@8V/Number;1 P-Channel/Pd - Power Dissipation;500mW/RDS(on);80mΩ@3.7V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;620pF


12V 80mΩ@3.7V 1 P-Channel 500mW MicroFoot-4 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);17nC@8V/Number;1 P-Channel/Pd - Power Dissipation;500mW/RDS(on);80mΩ@3.7V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);17nC@8V/Number;1 P-Channel/Pd - Power Dissipation;500mW/RDS(on);80mΩ@3.7V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);130pF/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;620pF


    12V 80mΩ@3.7V 1 P-Channel 500mW MicroFoot-4 Single FETs, MOSFETs RoHS

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