VISHAY-Single FETs, MOSFETs-SI8824EDB-T2-E1

Description

Drain to Source Voltage;20V/Gate Charge(Qg);6nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;900mW/RDS(on);175mΩ@1.2V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));800mV


20V 175mΩ@1.2V 1 N-channel 900mW X-FBGA-4 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);6nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;900mW/RDS(on);175mΩ@1.2V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));800mV20V 175mΩ@1.2V 1 N-channel... Read more

$1.65 Excl. VAT

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);6nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;900mW/RDS(on);175mΩ@1.2V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);2.9A/Gate Threshold Voltage (Vgs(th));800mV


    20V 175mΩ@1.2V 1 N-channel 900mW X-FBGA-4 Single FETs, MOSFETs RoHS

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