VISHAY-Single FETs, MOSFETs-SI8851EDB-T2-E1

Description

Drain to Source Voltage;20V/Gate Charge(Qg);180nC@8V/Number;1 P-Channel/Pd - Power Dissipation;660mW/RDS(on);8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.7A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;6.9nF


20V 8mΩ@4.5V 1 P-Channel 660mW MicroFoot-30 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);180nC@8V/Number;1 P-Channel/Pd - Power Dissipation;660mW/RDS(on);8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.7A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;6.9nF20V 8mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);180nC@8V/Number;1 P-Channel/Pd - Power Dissipation;660mW/RDS(on);8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.7A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;6.9nF


    20V 8mΩ@4.5V 1 P-Channel 660mW MicroFoot-30 Single FETs, MOSFETs RoHS

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